SIGMA: Difference between revisions
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== Related Tags and Sections == | == Related Tags and Sections == | ||
{{TAG|ISMEAR}} | {{TAG|ISMEAR}} | ||
== Example Calculations using this Tag == | |||
{{TAG|Bandgap of Si in GW}}, {{TAG|Bandstructure of Si in GW (VASP2WANNIER90)}}, {{TAG|Bandgap of Si using different DFT+HF methods}}, {{TAG|Beta-tin Si}}, {{TAG|Cd Si}}, {{TAG|Cd Si relaxation}}, {{TAG|Cd Si volume relaxation}}, {{TAG|CO on Ni 111 surface}}, {{TAG|Dielectric properties of Si}}, {{TAG|Dielectric properties of SiC}}, {{TAG|H2O}}, {{TAG|H2O molecular dynamics}}, {{TAG|Fcc Ni}}, {{TAG|Fcc Si}}, {{TAG|Fcc Si bandstructure}}, {{TAG|Graphite interlayer distance}}, {{TAG|Graphite MBD binding energy}}, {{TAG|Graphite TS binding energy}}, {{TAG|MgO optimum mixing}}, {{TAG|Ni 100 surface bandstructure}}, {{TAG|Ni 100 surface relaxation}}, {{TAG|Ni 111 surface high precision}}, {{TAG|O atom spinpolarized low symmetry}}, {{TAG|Si bandstructure}}, {{TAG|STM of graphene}}, {{TAG|STM of graphite}}, {{TAG|Vibrational frequencies of CO on Ni 111 surface}} | |||
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[[The_VASP_Manual|Contents]] | [[The_VASP_Manual|Contents]] | ||
[[Category:INCAR]] | [[Category:INCAR]] | ||
Revision as of 09:43, 16 February 2017
SIGMA = [real]
Default: SIGMA = 0.2
Description: SIGMA specifies the width of the smearing in eV.
Related Tags and Sections
Example Calculations using this Tag
Bandgap of Si in GW, Bandstructure of Si in GW (VASP2WANNIER90), Bandgap of Si using different DFT+HF methods, Beta-tin Si, Cd Si, Cd Si relaxation, Cd Si volume relaxation, CO on Ni 111 surface, Dielectric properties of Si, Dielectric properties of SiC, H2O, H2O molecular dynamics, Fcc Ni, Fcc Si, Fcc Si bandstructure, Graphite interlayer distance, Graphite MBD binding energy, Graphite TS binding energy, MgO optimum mixing, Ni 100 surface bandstructure, Ni 100 surface relaxation, Ni 111 surface high precision, O atom spinpolarized low symmetry, Si bandstructure, STM of graphene, STM of graphite, Vibrational frequencies of CO on Ni 111 surface