SIGMA: Difference between revisions
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== Example Calculations using this Tag == | == Example Calculations using this Tag == | ||
{{TAG|Bandgap of Si in GW}}, {{TAG|Bandstructure of Si in GW (VASP2WANNIER90)}}, {{TAG|Bandgap of Si using different DFT+HF methods}}, {{TAG|Beta-tin Si}}, {{TAG|Cd Si}}, {{TAG|Cd Si relaxation}}, {{TAG|Cd Si volume relaxation}}, {{TAG|CO on Ni 111 surface}}, {{TAG|Dielectric properties of Si}}, {{TAG|Dielectric properties of SiC}}, {{TAG|H2O}}, {{TAG|H2O molecular dynamics}}, {{TAG|Fcc Ni}}, {{TAG|Fcc Si}}, {{TAG|Fcc Si bandstructure}}, {{TAG|Graphite interlayer distance}}, {{TAG|Graphite MBD binding energy}}, {{TAG|Graphite TS binding energy}}, {{TAG|MgO optimum mixing}}, {{TAG|Ni 100 surface bandstructure}}, {{TAG|Ni 100 surface relaxation}}, {{TAG|Ni 111 surface high precision}}, {{TAG|O atom spinpolarized low symmetry}}, {{TAG|Si bandstructure}}, {{TAG|STM of graphene}}, {{TAG|STM of graphite}}, {{TAG|Vibrational frequencies of CO on Ni 111 surface}} | {{TAG|Bandgap of Si in GW}}, {{TAG|Bandstructure of Si in GW (VASP2WANNIER90)}}, {{TAG|Bandgap of Si using different DFT+HF methods}}, {{TAG|Beta-tin Si}}, {{TAG|Cd Si}}, {{TAG|Cd Si relaxation}}, {{TAG|Cd Si volume relaxation}}, {{TAG|CO on Ni 111 surface}}, {{TAG|Constrained MD using a canonical ensemble}}, {{TAG|Constrained MD using a microcanonical ensemble}}, {{TAG|Dielectric properties of Si}}, {{TAG|Dielectric properties of Si using BSE}}, {{TAG|Dielectric properties of SiC}}, {{TAG|Equilibrium volume of Si in the RPA}}, {{TAG|H2O}}, {{TAG|H2O molecular dynamics}}, {{TAG|Fcc Ni}}, {{TAG|Fcc Si}}, {{TAG|Fcc Si bandstructure}}, {{TAG|Graphite interlayer distance}}, {{TAG|Graphite MBD binding energy}}, {{TAG|Graphite TS binding energy}}, {{TAG|Model BSE calculation on Si}}, {{TAG|MgO optimum mixing}}, {{TAG|Ni 100 surface bandstructure}}, {{TAG|Ni 100 surface relaxation}}, {{TAG|Ni 111 surface high precision}}, {{TAG|NiO LSDA}}, {{TAG|O atom spinpolarized low symmetry}}, {{TAG|Si bandstructure}}, {{TAG|Si HSE bandstructure}}, {{TAG|Standard relaxation}}, {{TAG|STM of graphene}}, {{TAG|STM of graphite}}, {{TAG|Vibrational frequencies of CO on Ni 111 surface}} | ||
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[[The_VASP_Manual|Contents]] | [[The_VASP_Manual|Contents]] | ||
[[Category:INCAR]] | [[Category:INCAR]] | ||
Revision as of 11:52, 24 February 2017
SIGMA = [real]
Default: SIGMA = 0.2
Description: SIGMA specifies the width of the smearing in eV.
Related Tags and Sections
Example Calculations using this Tag
Bandgap of Si in GW, Bandstructure of Si in GW (VASP2WANNIER90), Bandgap of Si using different DFT+HF methods, Beta-tin Si, Cd Si, Cd Si relaxation, Cd Si volume relaxation, CO on Ni 111 surface, Constrained MD using a canonical ensemble, Constrained MD using a microcanonical ensemble, Dielectric properties of Si, Dielectric properties of Si using BSE, Dielectric properties of SiC, Equilibrium volume of Si in the RPA, H2O, H2O molecular dynamics, Fcc Ni, Fcc Si, Fcc Si bandstructure, Graphite interlayer distance, Graphite MBD binding energy, Graphite TS binding energy, Model BSE calculation on Si, MgO optimum mixing, Ni 100 surface bandstructure, Ni 100 surface relaxation, Ni 111 surface high precision, NiO LSDA, O atom spinpolarized low symmetry, Si bandstructure, Si HSE bandstructure, Standard relaxation, STM of graphene, STM of graphite, Vibrational frequencies of CO on Ni 111 surface